(China (Mainland))
Product Summary
The FDS7779Z is a P-Channel MOSFET which has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. The FDS7779Z features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Parametrics
FDS7779Z absolute maixmum ratings: (1)VDSS Drain-Source Voltage: –30 V; (2)VGSS Gate-Source Voltage: ±25 V; (3)ID Drain Current: –16 A; –50A; (4)Power Dissipation for Single Operation: 2.5W; (5)TSTG Operating and Storage Junction Temperature Range: –55 to +150 ℃.
Features
FDS7779Z features: (1)-16 A, -30 V. RDS(ON) = 7.2 mΩ @ VGS = -10 V; RDS(ON) = 11.5 mΩ @ VGS = -4.5 V; (2)ESD protection diode (note 3); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS7779Z |
Fairchild Semiconductor |
MOSFET 30V P-Channel PowerTrench |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FDS7060N7 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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 |
FDS7064A |
Other |
|
Data Sheet |
Negotiable |
|
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|
FDS7064N |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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|
FDS7064N7 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
||||
|
FDS7064SN3 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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|
FDS7066ASN3 |
Fairchild Semiconductor |
MOSFET 30V N-Channel PowerTrench |
Data Sheet |
Negotiable |
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