Product Summary
The M29W160FB70N3E is a 16 Mbit non-volatile memory, respectively. The M29W160FB70N3E can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V for access time of 80 ns and 70 ns, respectively). On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
Parametrics
M29W160FB70N3E absolute maximum ratings: (1)TA Ambient temperature grade: –40 to 125 °C; (2)TBIAS Temperature under bias: –50 to 125 °C; (3)TSTG Storage temperature: –65 to 150 °C; (4)VIO Input or output voltage:–0.6 to VCC+0.6 V; (5)VCC Supply voltage: –0.6 to 4 V; (6)VID Identification voltage: –0.6 to 13.5 V.
Features
M29W160FB70N3E features: (1)Unlock Bypass Program command– Faster production/batch programming; (2)VPP/WP pin for Fast program and Write Protect (available in the M29W320FT/B only); (3)Temporary block unprotection mode; (4)Common Flash interface– 64 bit security code; (5)Low power consumption– Standby and Automatic Standby; (6)100,000 Program/Erase cycles per block.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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M29W160FB70N3E |
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