GT60M303

silicon N channel IGBT, TO, 900 V, 0.7μs

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Price:: US $1.50~1.50 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 5000 :	1.50 / Piece

PartNumber:: GT60M303

Brand:: Toshiba Semiconductor - Toshiba | Pack: TO | D/C: 11+

Availability:: Supply Ability: 3/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-01-02

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Part Number:GT60M303
US $1.50 - 1.50
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piece

Product Summary

The GT60M303 is a silicon N channel IGBT.

Parametrics

GT60M303 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 900 V; (2)Gate-Emitter Voltage, VGES: ±25 V; (3)Collector Power Dissipation (Tc = 25°C) PC: 170 W; (4)Junction Temperature, Tj: 150 °C; (5)Storage Temperature Range, Tstg: -55~150 °C; (6)Screw Torque ― 0.8 N·m.

Features

GT60M303 features: (1)Fourth generation IGBT; (2)FRD included between emitter and collector; (3)Enhancement mode type; (4)High speed IGBT : tf = 0.25μs (TYP.) FRD : trr = 0.7μs (TYP.) ; (5)Low saturation voltage : VCE (sat) = 2.1V (TYP.).