JS28F128J3D75

TSOP56, JS28F128J3D75, –2.0 to +5.6 V, low-voltage capability, Flash Memory

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Price:: US $1.95~1.98 / piece [Get Latest Price]

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PartNumber:: JS28F128J3D75

Brand:: Intel Corporation - Intel | Pack: TSOP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-05-15

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Part Number:JS28F128J3D75
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Product Summary

The JS28F128J3D75 is a flash memory which provides improved mainstream performance with enhanced security features, taking advantage of the high quality and reliability of the NOR-based Intel 0.13um process technology. Offered in 128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the Numonyx Embedded Flash Memory (J3 V. D) device brings reliable, low-voltage capability (3 V read, program, and erase) with high speed, low-power operation.

Parametrics

JS28F128J3D75 absolute maximum ratings: (1)Temperature under Bias Expanded (TA, Ambient):–40 to +85 °C; (2)Storage Temperature –65 to +125 °C ; (3)VCC Voltage:–2.0 to +5.6 V ; (4)VCCQ :–2.0 to +5.6 V ; (5)Voltage on any input/output signal (except VCC, VCCQ):–2.0 to VCCQ (max) + 2.0 V; (6)ISH Output Short Circuit Current:100 mA.

Features

JS28F128J3D75 features: (1)Architecture:High-density symmetrical 128-Kbyte blocks;256 Mbit (256 blocks);128 Mbit (128 blocks);64 Mbit (64 blocks);32 Mbit (32 blocks); (2)Performance:75 ns Initial Access Speed (128/64/32 -Mbit densities):95 ns Initial Access Speed (256 Mbit only);25 ns 8-word and 4-word Asynchronous page-mode reads;32-Byte Write buffer;4 μs per Byte Effective programming time; (3)System Voltage and Power:VCC = 2.7 V to 3.6 V;VCCQ = 2.7 V to 3.6 V; (4)Packaging:56-Lead TSOP package (32, 64, 128 Mbit only);64-Ball Numonyx Easy BGA package (32, 42, 128 and 256 Mbit); (5)Security:Enhanced security options for code protection:128-bit Protection Register;64-bit Unique device identifier;64-bit User-programmable OTP cells; Absolute protection with VPEN = GND;Individual block locking;Block erase/program lockout during power transitions; (6)Software:Program and erase suspend support;Flash Data Integrator (FDI), Common Flash Interface (CFI) Compatible; (7)Quality and Reliability:Operating temperature: -40 °C to +85 °C;100K Minimum erase cycles per block;0.13 μm ETOX Process.